کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
447702 1443179 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Harmonic and intermodulation performance of moderate inversion MOSFET transconductors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر شبکه های کامپیوتری و ارتباطات
پیش نمایش صفحه اول مقاله
Harmonic and intermodulation performance of moderate inversion MOSFET transconductors
چکیده انگلیسی

This article discusses the harmonic and intermodulation performance of moderate inversion MOSFET transconductors. The bulk of the nMOS transistor is tied to ground, at all levels of inversion, including moderate inversion and the transistor is operating in the saturation region where it behaves qualitatively as a constant current source. The current–voltage characteristic of the transistor is approximated using a Fourier-series model. Using this model, analytical expressions are obtained for amplitudes of the harmonics and intermodulation products resulting from multi-sinusoidal gate-to-source input voltages. The special case of a two equal-amplitude sinusoidal input is considered in detail and the results are compared with previously published results.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: AEU - International Journal of Electronics and Communications - Volume 66, Issue 11, November 2012, Pages 892–896
نویسندگان
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