Bulk-driven floating-gate and bulk-driven quasi-floating-gate techniques for low-voltage low-power analog circuits design

In this paper, novel non-conventional techniques,1 named by the author of this paper “bulk-driven floating-gate (BD-FG)” MOS transistor (MOST) and “bulk-driven quasi-floating-gate (BD-QFG) MOST” for low-voltage (LV) low-power (LP) analog circuit design are presented. These novel techniques appear as a good solution to merge the advantages of floating-gate (FG) and quasi-floating-gate (QFG) with the advantages of bulk-driven (BD) technique and suppress their disadvantages. Consequently, the transconductance and transient frequency of BD-FG and BD-QFG MOSTs approach the conventional gate driven (GD) MOST values. Furthermore, a novel LV LP class AB second generation current conveyor based on BD-FG MOST is presented in this paper as an example. The supply voltage is only ±0.4 V with a rail-to-rail voltage swing capability and total power consumption of mere 10 μW. PSpice simulation results using the 0.18 μm P-well CMOS technology are included to confirm the attractive properties of these new techniques.