کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4630502 | 1340601 | 2012 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A finite difference scheme for two-dimensional semiconductor device of heat conduction on composite triangular grids
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
ریاضیات
ریاضیات کاربردی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The momentary state of a semiconductor device of heat conduction is described by a system of four nonlinear partial differential equations. One elliptic equation is for the electrostatic, two parabolic equations are for the electron concentration and the hole concentration, and one heat exchange equation is for the temperature. According to the necessary of practical numerical simulations and based on the balance equation, finite difference schemes for two-dimensional transient behavior of a semiconductor device of heat conduction on composite triangular grids are constructed. Studying their stability and convergence properties, the error estimate in the energy norm is obtained. Finally, a numerical example is given.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Mathematics and Computation - Volume 218, Issue 11, 5 February 2012, Pages 6458–6468
Journal: Applied Mathematics and Computation - Volume 218, Issue 11, 5 February 2012, Pages 6458–6468
نویسندگان
Wei Liu, Yirang Yuan,