Efficient InGaP/GaAs DJ solar cell with double back surface field layer

An effective and optimised BSF layer is an important layer in both single junction and multijunction solar cells. In this work the use of the double layer BSF for top cell with their varied thicknesses is investigated on GaInP/GaAs DJ solar cell using the computational numerical modelling TCAD tool Silvaco ATLAS. The detail photo-generation rates are determined. The major modelling stages are described and the simulation results are validated with published experimental data in order to describe the accuracy of our results produced. For this optimized cell structure, the maximum Jsc = 17.33 mA/cm2, Voc = 2.66 V, and fill factor (FF) = 88.67% are obtained under AM1.5G illumination, exhibiting a maximum conversion efficiency of 34.52% (1 sun) and 39.15% (1000 suns).