A High Performance Bulk Driven Quasi Floating Gate MOSEFT Based Current Mirror

A high performance low voltage bulk driven quasi floating gate MOS based current mirror has been proposed. The combination of bulk driven and quasi FGMOS decreases the input impedance upto 120 Ω which is four times smaller than current mirror based on only bulk driven technique. The bandwidth has also been improved upto 173 MHz which is three folds of bandwidth of conventional bulk driven current mirror. Very high output impedance upto 1GΩ is achieved using self cascode technique in output section depending the value of factor m. Small signal analysis of proposed circuit verifies the simulated results. The circuit is simulated using 0.18 μm CMOS technology with supply voltage of ±0.3 V. The proposed current mirror is highly suitable for low voltage applications.