کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4916018 | 1428089 | 2017 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of silicon carbide MOSFETs on the efficiency and power quality of a microgrid-connected inverter
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
مهندسی انرژی و فناوری های برق
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چکیده انگلیسی
With the expanding power demands and increasing use of renewable energy resources, microgrids have been widely supported. Wide bandgap semiconductor devices with higher blocking voltage capabilities and higher switching speeds, such as silicon carbide (SiC) devices, will become a critical component in building microgrids. This paper describes a comprehensive investigation of the effects of SiC Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) on the efficiency and power quality of the inverters used in low voltage microgrids compared with conventional inverters based on silicon (Si) Insulated-gate Bipolar Transistors (IGBTs). First, the characteristics of both SiC and Si are measured by a double pulse test (DPT), considering thermal effects. Then, conduction and switching losses under different temperatures are calculated based on DPT results. Second, phase voltage distortions are modeled and calculated according to the tested switching and conduction characteristics of SiC, resulting in harmonic components in the phase current. Finally, an experiment is implemented. The experimental results show that the SiC-inverter greatly increases the energy efficiency and improves the power quality in the microgrid; these results are consistent with the analytical results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Energy - Volume 201, 1 September 2017, Pages 270-283
Journal: Applied Energy - Volume 201, 1 September 2017, Pages 270-283
نویسندگان
Xiaofeng Ding, Feida Chen, Min Du, Hong Guo, Suping Ren,