کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
4953905 1443123 2017 22 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Sub 0.5-V bulk-driven LTA in 0.18 μm CMOS
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر شبکه های کامپیوتری و ارتباطات
پیش نمایش صفحه اول مقاله
Sub 0.5-V bulk-driven LTA in 0.18 μm CMOS
چکیده انگلیسی
The paper deals with a new solution for an ultra-low-voltage loser take all (LTA) circuit, capable to operate from supply voltages ranging from 0.3 to 0.5 V. The proposed circuit exploit the idea of multiple voltage buffers with a common output. In order to obtain a compact and precise LTA, a new kind of an ultra-low-voltage buffer has been developed. Owing to the fact that for such a low supply voltage the available voltage swing is highly reduced, the impact of transistor mismatches and speed-accuracy-power tradeoffs have extensively been discussed in the paper. While implemented in a standard 0.18 μm CMOS process, the proposed LTA circuit in a two-input version consumes 3.0 μW from a 0.5 V supply and provides 10 μs crossover recovery time for a 1 pF load capacitance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: AEU - International Journal of Electronics and Communications - Volume 77, July 2017, Pages 67-75
نویسندگان
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