Energy optimization for multi-level cell non-volatile memory using state remapping

Non-volatile Memory (NVM) is emerging as a promising technology to build future main memory or cache. Multi-level cell (MLC) NVM that stores multiple bits in a single cell has been developed in recent years. Different NVM technology has its own writing schemes to store multiple bits, and the amount of write energy varies across different states. For MLC Phase-Change Memory (PCM), the energy consumption of writing intermediate states, '01' and '10', is bigger than that of writing states '00' and '11'. For MLC Spin-Transfer Torque Magnetic RAM (STT-MRAM), the energy consumption of flipping the left bit of a 2-bit cell is greater than that of flipping the right bit. To reduce the MLC NVM write energy consumption, we propose an encoding scheme to reduce the amount of intermediate states' write for MLC PCM and another encoding scheme to decrease the number of the left bit flips for MLC STT-MRAM. The main idea of both schemes is state remapping. We find two minimum write frequency states and remap them to state '01' and '10' respectively for MLC PCM. In addition, for MLC STT-MRAM, we seeks the remapping decision that can minimize the number of the left bit flips and reduces the write of states '01' and '10'. The experimental results show that the encoding scheme for MLC PCM saves 5.25% energy on average and the encoding scheme for MLC STT-MRAM saves 12.17% energy on average.