کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
500732 863107 2005 13 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Multigroup equations to the hot-electron hot-phonon system in III–V compound semiconductors
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر نرم افزارهای علوم کامپیوتر
پیش نمایش صفحه اول مقاله
Multigroup equations to the hot-electron hot-phonon system in III–V compound semiconductors
چکیده انگلیسی

We present a fast, deterministic solution method for the coupled electron–phonon Boltzmann equations. This physically motivated, discrete model is used for studying the transport properties of GaAs in response to a time-depending external electric field. We especially point out the influence of the Rees effect. As for checking the reliability of our results, they are compared with Monte Carlo calculations for the same physical situation. The interesting steady state solutions of the electron distribution functions for the multivalley regime in GaAs are discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Computer Methods in Applied Mechanics and Engineering - Volume 194, Issues 25–26, 1 July 2005, Pages 2806–2818
نویسندگان
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