Performances of p-side down vertical InGaN/GaN blue light-emitting diodes with chip size

In this paper, the p-side down vertical InGaN/GaN blue light-emitting diodes with different geometric patterns of n-electrodes of chip sizes of 300 × 300 µm2, 500 × 500 µm2 and 1000 × 1000 µm2 have been optimized for achieving a uniform distribution of current density and subsequently improved light extraction efficiency. An LED with a well-designed n-electrode pattern shows a uniform distribution of light emission with a relatively high output power due to uniform current spreading. It is observed that the n-electrode pattern has a marked influence on the current distribution and the light output power for the large area p-side down vertical LEDs.