کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5007986 | 1461833 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhancement of near infrared light sensing using side-gate modulation
ترجمه فارسی عنوان
افزایش حسگر نور مادون قرمز با استفاده از مدولاسیون جانبی
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
چکیده انگلیسی
The integration of nanostructures in electronic devices utilizes their unique quantum properties for realizing discrete measuring systems. Specifically, self-assembled organic monolayers and nanocrystals (NCs), together with bottom-up production methods, can lead to new types of electronic devices. In this work, we present a wavelength-tunable near-infrared detection device in which PbS NCs are used to create an optical gate for an AlGaAs/GaAs high electron mobility device. By integrating side gates, we were able to enhance light detection sensitivity by optimizing the conductivity of the channel. Both DC and AC modulations of the side gate were tested and compared in order to enhance the detector's signal-to-noise ratio (SNR). Higher harmonic signals of the side gate modulation supply additional information about the detection mechanism.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 267, 1 November 2017, Pages 1-7
Journal: Sensors and Actuators A: Physical - Volume 267, 1 November 2017, Pages 1-7
نویسندگان
Avner Neubauer, Arthur Shapiro, Shira Yochelis, Eyal Capua, Ron Namman, Efrat Lifshitz, Yossi Paltiel,