کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5007986 1461833 2017 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Enhancement of near infrared light sensing using side-gate modulation
ترجمه فارسی عنوان
افزایش حسگر نور مادون قرمز با استفاده از مدولاسیون جانبی
موضوعات مرتبط
مهندسی و علوم پایه شیمی الکتروشیمی
چکیده انگلیسی
The integration of nanostructures in electronic devices utilizes their unique quantum properties for realizing discrete measuring systems. Specifically, self-assembled organic monolayers and nanocrystals (NCs), together with bottom-up production methods, can lead to new types of electronic devices. In this work, we present a wavelength-tunable near-infrared detection device in which PbS NCs are used to create an optical gate for an AlGaAs/GaAs high electron mobility device. By integrating side gates, we were able to enhance light detection sensitivity by optimizing the conductivity of the channel. Both DC and AC modulations of the side gate were tested and compared in order to enhance the detector's signal-to-noise ratio (SNR). Higher harmonic signals of the side gate modulation supply additional information about the detection mechanism.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 267, 1 November 2017, Pages 1-7
نویسندگان
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