کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5008119 1461836 2017 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Integrated magnetic-sensitive differential circuit based on heterojunction silicon magnetic-sensitive transistor
ترجمه فارسی عنوان
مدار دیفرانسیل مجذور مغناطیسی یکپارچه بر اساس ترانزیستور حساس مغناطیسی سیلیکون ناهمگن
موضوعات مرتبط
مهندسی و علوم پایه شیمی الکتروشیمی
چکیده انگلیسی
This paper presents an integrated magnetic-sensitive differential circuit, consisting of two heterojunction silicon magnetic-sensitive transistors (HSMSTs) with opposite magnetic-sensitive directions and two collector load resistors. The two HSMSTs have a common emitter (E), two bases (B1, B2), two collectors (C1, C2) and two output terminals of the collector voltage. Through using the micro-electro-mechanical system (MEMS) technology and the chemical vapour deposition (CVD) method, chips were designed and fabricated on a p-type 〈100〉 double-side polished silicon wafer with a high resistivity. When VDD = 10.0 V and IB = 6.0 mA, the magnetic sensitivity (Sv) of the proposed differential circuit was 275 mV/T at room temperature and its temperature coefficient (αST) was −1.668%/°C. The experimental results show that the magnetic sensitivity and temperature characteristics of proposed magnetic field sensors can be improved by using integrated differential circuits based on HSMSTs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 264, 1 September 2017, Pages 268-273
نویسندگان
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