کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5008243 | 1461839 | 2017 | 5 صفحه PDF | دانلود رایگان |
- Development of silicon-based CMOS-compatible thermal conductivity detectors.
- Promising limit of detection of 60Â ppm (pentane/helium) achieved for this kind of sensors.
- Improvement of the limit of detection by more than one order of magnitude compared to referenced work.
We present a nanofabricated Thermal Conductivity Detector (nano-TCD), designed to be monolithically integrated with a CMOS technology compatible NEMS, in order to widen its analyte spectrum in the low molecular weight volatile organic compounds range. The nano-TCD uses arrays of silicon nano-wires, with 220 nm Ã 250 nm cross sections and 2 μm suspension gap over the silicon bulk. In order to filter out the 1/f flicker noise produced by the silicon nanowires, we used a signal modulation technique based on the 3Ï method, thanks to the fast response time of the nano-TCD. Experimental results demonstrate detection of pentane and butane with a limit of detection of 60 ppm and 70 ppm respectively (mole fraction).
Journal: Sensors and Actuators A: Physical - Volume 261, 1 July 2017, Pages 9-13