Cu4O3-based all metal oxides for transparent photodetectors

All-oxide photodetectors based on Cu4O3 were fabricated using DC and RF magnetron sputtering. A quality paramelaconite Cu4O3 was formed by using large-scale available sputtering method and identified by X-ray diffraction. In order to establish a transparent junction, p-type Cu4O3 was deposited onto an n-type ZnO. The indium-tin-oxide (ITO) layer was served as an electron transporting layer. The general device has a structure of Cu4O3/ZnO/ITO to show overall high-transmittance for broad wavelengths with a peak transmittance over 72%. To enhance the photodetector performances, a functional NiO layer was applied as a hole transporting layer, which actively controls the carrier movements, resulting in a quick photoresponse of 33 ms. We demonstrated the paramelaconite Cu4O3 as a transparent entity and provide the route for effective designs for transparent photoelectric applications.