Fabrication and characterization of V2O5 nanorods based metal-semiconductor-metal photodetector

- V2O5 nanorods are fabricated by SP method.
- XRD, EDS, and PL analyses confirmed the formation of V2O5 NRs.
- The photodetector indicated high sensitivity of 2600%.

The fabrication and characterization of a metal-semiconductor-metal (MSM) visible photodetector based on V2O5 NRs are investigated. V2O5 nanorods (NRs) is synthesized on p-type Si(100) by spray pyrolysis method. The MSM photodetector is based on V2O5 NRs grown on Si(100) substrate. Structural and optical properties of the V2O5 NRs are studied using high resolution X-ray diffraction, field emission-scanning electron microscopy and photoluminescence spectroscopy. The results reveal an orthorhombic structure with preferred orientation along (001) plane of the prepared V2O5 NRs. Photoluminescence (PL) spectra show intensive and sharp green light emission at about 535 nm with high intensity. Upon exposure illumination to 540 nm (1.535 mW/cm2) at an applied voltage of 5 V, the device Exhibit 260.96 × 102 sensitivity; photodetector gain of device is 270, photoresponse peak of 0.948 A/W and photocurrent of 2.7 × 10−4A. The response and recovery times are determined as 0.787 s and 0.541 s, respectively; upon exposure to 540 nm light at 5 V applied bias. The obtained results indicate that the V2O5 NRs is a promising candidate for high performance as a MSM photodetector for commercially photoelectronic applications.