کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5009524 1462048 2017 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low temperature humidity sensor based on Ge nanowires selectively grown on suspended microhotplates
ترجمه فارسی عنوان
سنسور رطوبت با درجه حرارت پایین بر اساس نانوسیمهای گاو انتخاب شده بر روی میکرو پلاستیکی معلق رشد می کند
کلمات کلیدی
نانوسیمهای ژرمانیوم، رشد محلی ادغام دستگاه، سنسور گاز بخار آب،
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی آنالیزی یا شیمی تجزیه
چکیده انگلیسی


- Monocrystalline p-type Ge NWs have been locally grown on top of microhotplates.
- Gas sensor based-on Ge NWs have been studied in a strict low temperature range.
- Pre-adsorbed O2 is required for gas sensing towards reducing species.
- The depicted sensing mechanism is comparable to the model for metal oxide.

The gas sensing properties of germanium (Ge) monocrystalline nanowires (NWs) at temperatures up to 100 °C have been demonstrated for the first time. The devices have been fabricated based on an energy efficient and site-specific vapor-liquid-solid growth of NW meshes on top of microhotplates, which contain a buried heater and top electrodes. The devices have been investigated for the detection of oxygen, nitrogen dioxide and carbon monoxide gases, showing the important effect played by pre-adsorbed surface oxygen in the response to the different gases. The Ge NW-based devices exhibit p-type conductivity and show high selectivity in their response towards water vapor. Water vapor interaction is not dependent on the presence of oxygen and the adsorption leads to electron donation in the Ge nanowires. TEM analysis of the NWs proves that they are covered by a thin, outer germanium oxide layer, which is stable and does not grow upon exposure to these gases and operation temperatures up to 100 °C. The presence of this oxide layer plays a key role in the sensing mechanisms.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators B: Chemical - Volume 243, May 2017, Pages 669-677
نویسندگان
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