کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5018503 | 1467430 | 2017 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nucleation and growth mechanisms of nanoscale deformation twins in hexagonal-close-packed metal magnesium
ترجمه فارسی عنوان
هسته و مکانیزم های رشد دینامیک تغییر شکل نانو در منیزیم فلزی بسته شده شش ضلعی
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
فلز بسته بندی شده شش ضلعی، منیزیم، تغییر شکل نانو دوقلو، اختلالات جزئی شکلی،
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی مکانیک
چکیده انگلیسی
A theoretical model is suggested to describe the dislocation-mediated mechanisms for the nucleation and growth of nanoscale deformation twins in hexagonal-close-packed materials. In the framework of the model, the nanoscale deformation twins nucleate and grow through the glide of glissile Shockley partial dislocations which are generated due to the nonplanar dissociation of the leading dislocation in a pile-up of ãaã slip dislocations on the basal plane. Here, the pile-up of ãaã dislocations on the basal plane was produced by preceding plastic deformation processes. The energy and stress conditions of the nanoscale deformation twin nucleation and growth through the dislocation-mediated mechanisms are calculated and discussed in detail. The results indicate that, when the pre-existent pile-up on the basal plane is 10-5, the nanoscale deformation {1¯012} twin nucleation stress is about 466.97-519.51 MPa. If take the shear stress applied to the pre-existent dislocation pile-up into account, the results are consistent with the experimental and molecular dynamic simulation results in literature. Besides, the twin is connected to grain boundary, and the longitudinal section of the twin is an approximately rectangular shape.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Mechanics of Materials - Volume 109, June 2017, Pages 26-33
Journal: Mechanics of Materials - Volume 109, June 2017, Pages 26-33
نویسندگان
H. Feng, Q.H. Fang, B. Liu, Y. Liu, Y.W. Liu, P.H. Wen,