Probing InGaN immiscibility at AlGaN/InGaN heterointerface on silicon (111) through two-step capacitance-voltage and conductance-voltage profiles

Probing InGaN immiscibility at AlGaN/InGaN heterointerface on silicon (111) through two-step capacitance-voltage and conductance-voltage profiles

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials & Design - Volume 133, 5 November 2017, Pages 176-185

Ankush Bag, Shubhankar Majumdar, Subhashis Das, Dhrubes Biswas,