کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
538851 | 871196 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhanced luminescence of GaN-based light-emitting diodes by selective wet etching of GaN/sapphire interface using direct heteroepitaxy laterally overgrowth technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We introduce a method to enhance the luminescence of GaN-based LEDs by combining the direct heteroepitaxy laterally overgrowth (DHELO) technique with selective wet etching process. The epitaxial overgrowth of GaN layers on sapphire substrate with SiO2 micro-rods array exhibited a reduced dislocation density and improved the crystal quality. The EL intensity of LEDs with SiO2 micro-rods array was 6.5% higher than conventional LEDs at 20 mA. The selective wet etching process was then used to texture the LED sidewalls into inverted pyramid shape. Finally, the EL intensity could be further enhanced about 12.5% as compared with LEDs with SiO2 micro-rods array when adopting the textured sidewalls.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Displays - Volume 32, Issue 2, April 2011, Pages 96–99
Journal: Displays - Volume 32, Issue 2, April 2011, Pages 96–99
نویسندگان
Chien-Chih Kao, Yan-Kuin Su, Chuing-Liang Lin, Jian-Jhong Chen,