کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5444585 1511111 2017 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Sputter-deposited WOx and MoOx for hole selective contacts
موضوعات مرتبط
مهندسی و علوم پایه مهندسی انرژی انرژی (عمومی)
پیش نمایش صفحه اول مقاله
Sputter-deposited WOx and MoOx for hole selective contacts
چکیده انگلیسی
Reactive sputter deposited tungsten and molybdenum oxide (WOx, MoOx) thin films are tested for their ability to form a hole selective contact for Si wafer based solar cells. A characterization approach based on analyzing the band bending induced in the c-Si absorber and the external and implied open-circuit voltage of test structures was used. It is shown that the oxygen partial pressure allows to tailor the selectivity to some extent and that a direct correlation between induced band bending and hole selectivity exists. Although the selectivity of the sputtered films is inferior to the reference films deposited by thermal evaporation, these results demonstrate a good starting point for further optimizations of sputtered WOx and MoOx towards higher work functions to improve the hole selectivity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Energy Procedia - Volume 124, September 2017, Pages 400-405
نویسندگان
, , , ,