کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5444585 | 1511111 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Sputter-deposited WOx and MoOx for hole selective contacts
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی (عمومی)
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چکیده انگلیسی
Reactive sputter deposited tungsten and molybdenum oxide (WOx, MoOx) thin films are tested for their ability to form a hole selective contact for Si wafer based solar cells. A characterization approach based on analyzing the band bending induced in the c-Si absorber and the external and implied open-circuit voltage of test structures was used. It is shown that the oxygen partial pressure allows to tailor the selectivity to some extent and that a direct correlation between induced band bending and hole selectivity exists. Although the selectivity of the sputtered films is inferior to the reference films deposited by thermal evaporation, these results demonstrate a good starting point for further optimizations of sputtered WOx and MoOx towards higher work functions to improve the hole selectivity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Energy Procedia - Volume 124, September 2017, Pages 400-405
Journal: Energy Procedia - Volume 124, September 2017, Pages 400-405
نویسندگان
Martin Bivour, Florian Zähringer, Paul Ndione, Martin Hermle,