کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5444608 | 1511111 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of Si tunnel diodes for c-Si based tandem solar cells using proximity rapid thermal diffusion
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication of Si tunnel diodes for c-Si based tandem solar cells using proximity rapid thermal diffusion Fabrication of Si tunnel diodes for c-Si based tandem solar cells using proximity rapid thermal diffusion](/preview/png/5444608.png)
چکیده انگلیسی
In this work we report on the development of the fabrication of Si tunnel junction using a combination of spin-on doping and proximity rapid thermal diffusion. A desirable attribute of this process is simplicity. Two different structures p++/n++ or n++/p++ were fabricated on (100) Si substrates. Carrier density profiles were measured by ECV to characterize the shallow doping profiles. Vertical tunnel diodes were fabricated and I(V) characteristics are presented. It is shown that device peak current densities up to 270 A/cm² are achieved using this technique, which is the best value reported with such simple technique.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Energy Procedia - Volume 124, September 2017, Pages 577-583
Journal: Energy Procedia - Volume 124, September 2017, Pages 577-583
نویسندگان
Alain Fave, Jean-François Lelièvre, Thibaut Gallet, Qiaoyu Su, Mustapha Lemiti,