کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5444613 1511111 2017 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Donor and acceptor energy levels in impurity Sb-, In-, Ag- and Cu-doped semiconducting BaSi2 thin films for device applications
موضوعات مرتبط
مهندسی و علوم پایه مهندسی انرژی انرژی (عمومی)
پیش نمایش صفحه اول مقاله
Donor and acceptor energy levels in impurity Sb-, In-, Ag- and Cu-doped semiconducting BaSi2 thin films for device applications
چکیده انگلیسی
In this article donor and acceptor energy levels due to the impurity Sb-, In-, Ag- and Cu-doped BaSi2 films grown in the ultra-high vacuum, UHV molecular beam epitaxy (MBE) were investigated. The temperature dependence of electron or hole concentrations indicated that the acceptor energy levels in impurity, In-, and Ag-doped BaSi2 are 86 meV, and 126 meV, respectively, and the donor energy levels in impurity Cu-, and Sb-doped BaSi2 are 35 meV, and 47 meV respectively. Two shallow donor energy levels of 47 meV and 35 meV respectively due to Sb and Cu impurity atoms in n-type BaSi2 were successfully identified for the device applications including photovoltaic.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Energy Procedia - Volume 124, September 2017, Pages 612-620
نویسندگان
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