Fabrication and Properties of InN NPs/Si as a photodetector

Indium nitride InN nanoparticles NPs are synthesized by laser ablation of indium target in ammonium hydroxide solution. The scanning electron microscope SEM, Fourier transforms infrared spectroscopy FTIR, and UV-VIS-NIR spectroscopy were used for investigating the NPs. The FTIR exhibit the presence of In=N bond. The SEM image shows a spherical shape of NPs. The transmission spectra have the maximum edge at 1378nm with band gap was 1.1eV. For optoelectronic properties, InN NPs colloidal was deposited on silicon substrates by drop casting. The characteristics of InN/Si heterojunction have a good rectifying with the spectral Responsivity 0.31 A/W at 750nm and quantum efficiency about 52.7 %.