Resonant Gate Driver for Series Operation of MOSFETs

Higher voltage rating of power MOS devices can be achieved by connecting them in series. The need of series string of power MOSFETs has brought many innovative ideas for triggering the string. This article presents one of such type of triggering mechanism. A reliable configuration of resonant gate driver for triggering the series string is proposed. The loss analysis of the proposed circuit states that this circuit minimizes the loss very effectively than the Totem pole conventional gate driver. The simulation results of the proposed circuit are verified experimentally by implementing the circuit to trigger two power MOSFETs simultaneously.