کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5446055 | 1511133 | 2016 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of GaP/Si Heterojunction Solar Cells
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی (عمومی)
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چکیده انگلیسی
The GaP/Si heterojunctions fabricated by molecular beam epitaxy (MBE) and plasma enhanced atomic layer deposition (PE-ALD) were studied. The degradation of charge carrier lifetime in Si was observed during the growth of single-crystalline GaP layer on Si substrates by MBE at 500-600 °C. The study performed by PL and DLTS has demonstrated the presence of the defective layer in Si, which is located within â¼30 nm near to the GaP/Si interface. This defective layer leads to significant reduction of solar cell performance for anisotype n-GaP/p-Si heterojunction due to strong recombination in the space charge region. The GaP/Si heterostructure with Si n-p homojunction exhibits better performance compared to the anisotype n-GaP/p-Si heterojunction because the defective layer is located in the n-Si emitter formed by intentional P diffusion. On the contrary, the deposition of amorphous GaP layer by PE-ALD at T < 380 °C does not lead to the degradation of Si wafer charge carrier lifetime.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Energy Procedia - Volume 102, December 2016, Pages 56-63
Journal: Energy Procedia - Volume 102, December 2016, Pages 56-63
نویسندگان
A.S. Gudovskikh, K.S. Zelentsov, A.I. Baranov, D.A. Kudryashov, I.A. Morozov, E.V. Nikitina, J.-P. Kleider,