کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5446557 | 1511143 | 2016 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modelling Kinetics of the Boron-Oxygen Defect System
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Here we report on modeling kinetics of the boron-oxygen defect system in crystalline silicon solar cells. The model, as supported by experimental data, highlights the importance of defect formation for mitigating carrier-induced degradation. The inability to rapidly and effectively passivate boron-oxygen defects is primarily due to the unavailability of the defects for passivation, rather than any “weakness” of the passivation reaction. The theoretical long-term stability of modules in the field is investigated as a worst-case scenario using typical meteorological year data and the System Advisor Model (SAM). With effective mounting of the modules, the modelling indicates that even in desert locations, destabilisation of the passivation is no concern within 40 years. We also incorporate the quadratic dependence of the defect formation rate on the total hole concentration, and highlight the influence of changing doping densities or changing illumination intensity on the CID mitigation process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Energy Procedia - Volume 92, August 2016, Pages 42-51
Journal: Energy Procedia - Volume 92, August 2016, Pages 42-51
نویسندگان
Brett Hallam, Malcolm Abbott, Jose Bilbao, Phill Hamer, Nicholas Gorman, Moonyong Kim, Daniel Chen, Katherine Hammerton, David Payne, Catherine Chan, Nitin Nampalli, Stuart Wenham,