کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5446596 | 1511143 | 2016 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Corona Charge in SiO2: Kinetics and Surface Passivation for High Efficiency Silicon Solar Cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This manuscript presents a method by which capacitance-voltage measurements can be used in conjunction with Kelvin-probe measurements to calculate the location of charge within a dielectric layer. A first order kinetic model for the transport of charge into SiO2 films after exposure to corona charge deposition is proposed. The rate limiting step for charge migration into oxide films has been observed to be the injection of charge from the surface (air-SiO2 interface). The charge lies preferentially at the air-SiO2 and SiO2-Si interfaces, and its injection into SiO2 has been characterized as having an activation energy of â¼ 50 meV. In this work, corona charge deposition has produced SRV < 2.7Â cm/s and J01 < 12 fA/cm2 which is within the requirements of high efficiency silicon solar cells. These results contribute to the understanding of corona charge interaction with SiO2 with a view to its potential application as an extrinsic method of passivation for highly efficient silicon solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Energy Procedia - Volume 92, August 2016, Pages 326-335
Journal: Energy Procedia - Volume 92, August 2016, Pages 326-335
نویسندگان
Ruy S. Bonilla, Nicolas Jennison, Deborah Clayton-Warwick, Katherine A. Collett, Lucy Rands, Peter R. Wilshaw,