کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5446611 | 1511143 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
In-situ Doping and Local Overcompensation of High Performance LPCVD Polysilicon Passivated Contacts as Approach to Industrial IBC Cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: In-situ Doping and Local Overcompensation of High Performance LPCVD Polysilicon Passivated Contacts as Approach to Industrial IBC Cells In-situ Doping and Local Overcompensation of High Performance LPCVD Polysilicon Passivated Contacts as Approach to Industrial IBC Cells](/preview/png/5446611.png)
چکیده انگلیسی
In this work, we investigate polysilicon passivation contacts, to be used for high performance IBC cells. We demonstrate an LPCVD process for in-situ p-type doped polysilicon. The p-type polysilicon can be locally overcompensated to n-type polysilicon using phosphorous implantation or POCl3 diffusion. Both contacts show excellent surface passivation, with recombination current (Jo) of 12 fA/cm2 for p-poly on a polished Si surface, and less than 10 fA/cm2 for compensated n-poly both on textured and polished surfaces. These polysilicon layers are implemented in the fabrication of n-PERT cells with front and rear polysilicon contacts. The resulting textured half-fabricated cells have an implied Voc of 701 mV after hydrogenation via PECVD deposition of SiNx:H. Different metallization processes, relevant for IBC cells, are applied. A Voc of 685 mV is obtained for the best cell metallized with low-temperature metallization (ITO/low-temperature Ag paste), and 678 mV is obtained for the best cell with industrial screen-printed firing-through contacts. In these n-PERT cells the same thin oxide layer is used for p-type and n-type polysilicon contacts.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Energy Procedia - Volume 92, August 2016, Pages 427-433
Journal: Energy Procedia - Volume 92, August 2016, Pages 427-433
نویسندگان
Yu Wu, Maciej K. Stodolny, L.J. Geerligs, Martijn Lenes, Jan-Marc Luchies,