کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5446615 | 1511143 | 2016 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhanced Oxidation of Thermally Grown SiO2 Due to P Precipitates
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Enhanced Oxidation of Thermally Grown SiO2 Due to P Precipitates Enhanced Oxidation of Thermally Grown SiO2 Due to P Precipitates](/preview/png/5446615.png)
چکیده انگلیسی
Previous studies of thermal oxidation on a doped structure showed that growth of thermal SiO2 depends on the charge carrier concentration. Here we show that growth behavior of a thermal SiO2 layer also depends strongly on the emitter's electrically non-active P concentration. Experimental data show that an increase in P precipitate concentration has a significant influence on the growth kinetics of thermally grown SiO2 layers. Despite constant charge carrier concentration in the emitter, an increase in growth rate up to a factor of 2 was measured in samples with increased inactive P concentration. Quantitative elemental analysis of the thermally grown SiO2 layers further shows that the SiO2 composition can be strongly influenced by the Si substrate's inactive P concentration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Energy Procedia - Volume 92, August 2016, Pages 457-465
Journal: Energy Procedia - Volume 92, August 2016, Pages 457-465
نویسندگان
Amir Dastgheib-Shirazi, Johannes Rinder, Gabriel Micard, Michael Steyer, Giso Hahn, Barbara Terheiden,