کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5446647 | 1511143 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Boron Emitter Formation by Plasma Immersion Ion Implantation in n-type PERT Silicon Solar Cells
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The use of plasma immersion ion implantation (PIII) is a relevant approach for the development of advanced solar cells technologies at lower cost (â¬/Wp). In this paper, we report on the development of homogeneous boron (B) doping of n-type crystalline silicon (cSi) substrate by the PIII technique. Using diborane (B2H6) as gas precursor, various doping profiles were identified fitting the requirements for boron-doped emitters in n-type PERT solar cells. Particularly, saturation current density (J0e) of 50 fA/cm2 were achieved on symmetrical samples for a 94 Ω/sg textured B-emitter passivated with SiO2/SiN stack. Bifacial n-type Passivated Emitter Rear Totally-diffused (n-PERT) solar cells were fabricated using the PIII technology and conversion efficiencies up to 19.8% on 239 cm2 Cz-Si wafers were obtained. As a consequence, these results indicate that PIII can compete with beamline technology but will have lower running cost. It is therefore a promising technology to create high efficiency cSi solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Energy Procedia - Volume 92, August 2016, Pages 697-701
Journal: Energy Procedia - Volume 92, August 2016, Pages 697-701
نویسندگان
Jean-François Lerat, Thibaut Desrues, Jérôme Le Perchec, Marianne Coig, Frederic Milesi, Frédéric Mazen, Thomas Michel, Laurent Roux, Yannick Veschetti, Sébastien Dubois,