کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5482490 | 1522308 | 2017 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Changes and challenges of photovoltaic inverter with silicon carbide device
ترجمه فارسی عنوان
تغییرات و چالش های اینورتر فتوولتائیک با دستگاه کاربید سیلیکون
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کلمات کلیدی
دستگاه سی سی، اینورتر فتوولتائیک، بازدهی بالا، چگالی بالا، چالش ها و روند،
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی های تجدید پذیر، توسعه پایدار و محیط زیست
چکیده انگلیسی
High efficiency, high power density, and high reliability are always the technical trends of converters for renewable energy applications. Silicon carbide (SiC) devices can break through the technical limitations of silicon (Si) devices. Thus, SiC devices are considered as the foundations of next-generation high-performance converters. Aimed at the photovoltaic (PV) power system, this study surveys state-of-the-art of PV inverters. The future requirements of PV inverters on efficiency, power density, reliability, and cost are proposed. The possible benefits and available demonstrations of SiC-based PV inverters are presented. Then, some technical challenges of SiC PV inverters, including switching ringing, cross-talk, short-circuit withstand, gate driver, package, high-capacity module, and thermal interface material, are comprehensively illustrated through experimental results. Available researches on these challenges are overviewed, and some research trends on SiC-based PV inverter are presented. This paper is helpful for the research and development of next-generation SiC-based inverters for renewable energy integration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Renewable and Sustainable Energy Reviews - Volume 78, October 2017, Pages 624-639
Journal: Renewable and Sustainable Energy Reviews - Volume 78, October 2017, Pages 624-639
نویسندگان
Zheng Zeng, Weihua Shao, Hao Chen, Borong Hu, Wensuo Chen, Hui Li, Li Ran,