کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5488133 | 1524069 | 2017 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of electrical properties in the insulating samples 70Ge: Ga p-type at very low temperatures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Experimental results on resistivity of the insulating samples 70Ge: Ga p-type at low temperatures has been analyzed in the insulating side of the Metal-Insulator Transition (MIT). The resistivity measurements were obtained in the temperature range 0.05-2.7â¯K. The five samples studied have Ga concentrations n ranging from 0.302â¯Ãâ¯1017 to 1.84â¯Ãâ¯1017 cmâ3. On the insulating side of the MIT, the study of the effect of low temperatures T on the electrical transport shows that the temperature dependence of the electrical conductivity is found to follow the Efros-Shklovskii Variable Range Hopping regime with Tâ1/2. This behavior showed that long range electron-electron interaction reduces the Density Of State of carriers at the Fermi level and creates the Coulomb gap. The data are for a 70Ge:Ga sample prepared and reported by Itoh et al. [22] .
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Chinese Journal of Physics - Volume 55, Issue 6, December 2017, Pages 2283-2290
Journal: Chinese Journal of Physics - Volume 55, Issue 6, December 2017, Pages 2283-2290
نویسندگان
Mohamed Errai, Abdelhamid El kaaouachi, Hassan El idrissi, Asmae Chakhmane,