کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5488335 1524071 2017 13 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Transverse thermoelectric power in a semiconductor quantum well in the presence of the Rashba effect
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
Transverse thermoelectric power in a semiconductor quantum well in the presence of the Rashba effect
چکیده انگلیسی
We have studied the Rashba spin-orbit effect on a quasi-two dimensional semiconductor quantum well with a parabolic potential placed in a magnetic field parallel to the plane of the quantum well, taking into account the Zeeman coupling. The expression for the density of states and the transverse thermoelectric power of the electron gas in a quasi-two-dimensional quantum well with a parabolic potential have been obtained for the case of strong degeneracy statistics. We show that the transverse thermoelectric power depends on the strength of the spin-orbital coupling parameter, the frequency ω0, which is a characteristic parameter of the electron gas thickness, and the strength of the magnetic field.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Chinese Journal of Physics - Volume 55, Issue 4, August 2017, Pages 1085-1091
نویسندگان
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