On the structural, morphological and electrical properties of tantalum oxy nitride thin films by varying oxygen percentage in reactive gases plasma

Tantalum oxy nitride (Ta-ON) thin films possess unique properties due to combined beneficial aspects of tantalum nitride and tantalum oxide. In the present work, Ta-ON thin films are synthesized using energetic ions and electrons beams emanated from the hot and decaying plasma in dense plasma focus (DPF) device. Oxygen percentage in the reactive gas admixture [O/(O+N)]% is varied from 10 to 60 for thin film synthesis. Influence of oxygen percentage on structural, morphological, compositional and electrical properties of thin films is also analyzed. Increase of oxygen percentage in the gas admixture (upto 40%) resulted in transformation of thin film from tantalum nitride to tantalum oxy nitride; however; higher oxygen percentages (≥ 50%) caused amorphization in synthesized thin film. Morphological analysis revealed that pure nitrogen environment yields the granular structure of film in nano-meter range whereas escalation of grains is observed with the increase in oxygen percentage. Cross sectional SEM showed better film growth rate at lower oxygen percentages. Compositional profiles exhibited improvement of oxygen content in thin film by increasing oxygen percentage in the admixture. The electrical resistivity of films shifted from conducting (for 0% oxygen) to semiconducting-insulating (for 60% oxygen) material range for maximum oxygen percentage.