کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5488526 1524102 2017 16 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Capacitance-voltage investigation of low residual carrier density in InAs/GaSb superlattice infrared detectors
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
Capacitance-voltage investigation of low residual carrier density in InAs/GaSb superlattice infrared detectors
چکیده انگلیسی
Capacitance-voltage (CV) analysis was performed on homojunction InAs/GaSb superlattice photodiodes for the mid-infrared spectral range around 5μm. The CV investigation was carried out over a wide temperature range from 80 K up to 200 K, for two nominally identical samples from two different epitaxy systems. The characterizations were carried out with a refined measurement setup, considering the impedance range, the measured frequency range and the accessible temperature range. For the calculated residual carrier density in the nid-region of the diodes values in the low 1014 cm−3 and 1015 cm−3 ranges were found, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 84, August 2017, Pages 3-6
نویسندگان
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