Investigation of hillocks formation on (1Â 0Â 0) HgCdTe layers grown by MOCVD on GaAs epi-ready substrates

Obtained epilayers are suitable for device fabrication. So far, significant improvements has been obtained in photoconductors operated at near-room temperatures. Devices fabricated from (1 0 0) HgCdTe have about one order of magnitude higher voltage responsivity than their (1 1 1) B counterparts.