Optical properties of electron-beam deposited quaternary Se86-xTe10Sb4Bix (0 ≤ x ≤ 8) chalcogenide alloys

Amorphous thin films of Se86-xTe10Sb4Bix (x = 0, 2, 4, 6 and 8) were synthesized by electron-beam deposition of the premelt quenched bulk samples. Swanepoel's standard envelope method was used to determine optical properties from spectrophotometric measurements in the UV-VIS-NIR spectral region. Tauc's extrapolation method and Wemple-Didomenico single oscillator model where used to determine the optical band gap energy (Egopt) in the region where the absorption coefficient α ≥ 104 cm−1. The values of Egopt decreased with increasing Bi additive. The complex dielectric constant (ε), Urbach energy (Eu), optical conductivity (σ), plasma frequency (ωP), single oscillator parameters (Eo and Ed) and lattice dielectric constant (εL) were determined. The changes noticed in optical parameters with Bi content were explained on the basis of chemical bond approach, increased defect states and increased density of localized states in the mobility gap.