کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5488612 | 1524101 | 2017 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
ZnS thin films grown by atomic layer deposition on GaAs and HgCdTe substrates at very low temperature
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: ZnS thin films grown by atomic layer deposition on GaAs and HgCdTe substrates at very low temperature ZnS thin films grown by atomic layer deposition on GaAs and HgCdTe substrates at very low temperature](/preview/png/5488612.png)
چکیده انگلیسی
ZnS films grown on GaAs and HgCdTe substrates by atomic layer deposition (ALD) under very low temperature were investigated in this work. ZnS films were grown under several temperatures lower than 140 °C. The properties of the films were investigated with high-resolution X-ray diffraction (HRXRD), scanning electron microscope (SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The results showed the ZnS films were polycrystalline. The growth rate monotonically decreased with temperature, as well as the root mean square (r.m.s) roughness measured by AFM. XPS measurement revealed the films were stoichiometric in Zn and S.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 85, September 2017, Pages 280-286
Journal: Infrared Physics & Technology - Volume 85, September 2017, Pages 280-286
نویسندگان
C.H. Sun, P. Zhang, T.N. Zhang, X. Chen, Y.Y. Chen, Z.H. Ye,