Photo-induced structural changes in Ge-Sb-Se films

Amorphous Ge-Sb-Se thin films have been prepared by the radio-frequency (RF) magnetron co-sputtering deposition technique, and their intrinsic photosensitivity and photo-induced structural changes have been investigated. The results show a crossover from photodarkening (PD) to photobleaching (PB) in the films when the film compositions change from Se-deficient to rich. Further Raman analysis on these as-prepared thin films irradiated with a laser of wavelength 655 nm in every five minutes provides direct evidence of photo-induced structure rearrangements.