کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5488695 | 1524105 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Regular articleImpact of high-conductivity n-type anti-debiasing layer on the photoresponse of “leaking” and “non-leaking” FPA elements in photovoltaic MCT-based n-on-p infrared FPA detectors
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Regular articleImpact of high-conductivity n-type anti-debiasing layer on the photoresponse of “leaking” and “non-leaking” FPA elements in photovoltaic MCT-based n-on-p infrared FPA detectors Regular articleImpact of high-conductivity n-type anti-debiasing layer on the photoresponse of “leaking” and “non-leaking” FPA elements in photovoltaic MCT-based n-on-p infrared FPA detectors](/preview/png/5488695.png)
چکیده انگلیسی
Impact of high-conductivity n-type anti-debiasing layer (ADL) on the photoresponse of focal plane array (FPA) elements in mercury-cadmium-tellurium based photovoltaic n-on-p infrared FPA detectors is analyzed via consideration of, first, measured current-voltage characteristics of FPA elements with “leaking” and “non-leaking” array photodiodes and, second, spatial photoresponse profiles measured using FPA elements of both types. A most pronounced manifestation of the parasitic diode with the p-n junction at the absorber layer/ADL interface consists in the emergence of negative photoresponses produced by the “leaking” FPA elements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 81, March 2017, Pages 223-227
Journal: Infrared Physics & Technology - Volume 81, March 2017, Pages 223-227
نویسندگان
V.V. Vasiliev, A.V. Vishnyakov, S.A. Dvoretsky, A.V. Predein, I.V. Sabinina, Yu.G. Sidorov, V.A. Stuchinsky,