کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489993 | 1524775 | 2018 | 19 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Band gap engineering of ZnMnO diluted magnetic semiconductor by alloying with ZnS
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper we report the results on the fabrication of diluted magnetic semiconductors Zn1âxMnxO1âySy thin films with manganese x = 0.05 and sulfur 0 â¤Â y â¤Â 0.15 compositions, respectively, by using ultrasonic spray pyrolysis method. The influence of the sulfur concentration on the band gap energy, structural and magnetic properties have been studied by using optical transmission, X-ray diffraction and superconducting quantum interference device (SQUID) measurements, respectively. The morphology and composition of samples were studied by using Scanning Electron Microscope (SEM) and X-ray photoelectron spectroscopy (XPS). With increasing of the sulfur concentration the band gap energy of composition decreases, while the magnetization increases proportional to the sulfur concentration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 446, 15 January 2018, Pages 206-209
Journal: Journal of Magnetism and Magnetic Materials - Volume 446, 15 January 2018, Pages 206-209
نویسندگان
Z.A. Yunusov, Sh. U. Yuldashev, Y.H. Kwon, D.Y. Kim, S.J. Lee, H.C. Jeon, H. Jung, A. Kim, T.W. Kang,