کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5490657 | 1524795 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Multi-analysis and modeling of asymmetry offset for Hall effect structures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The topological (asymmetry) offset voltage of CMOS cross-like Hall cells is analyzed in this paper. In order to attain the stated objective, different approaches have been considered. Both circuit and three-dimensional models have been developed. Variation of the misalignment offset with the biasing current has been studied through physical and circuit models. The latter is a non-homogenous finite elements model, which relies on using parameterized resistances and current-controlled current sources, of CMOS Hall cells. The displacement offset for various asymmetries and the offset variation with the temperature were investigated through the circuit model developed. Various experimental results for the single and magnetic equivalent offset have also been provided.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 426, 15 March 2017, Pages 245-251
Journal: Journal of Magnetism and Magnetic Materials - Volume 426, 15 March 2017, Pages 245-251
نویسندگان
Maria-Alexandra Paun,