کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5495823 | 1529826 | 2017 | 47 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Transport in a disordered ν=2â3 fractional quantum Hall junction
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
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چکیده انگلیسی
Electric and thermal transport properties of a ν=2â3 fractional quantum Hall junction are analyzed. We investigate the evolution of the electric and thermal two-terminal conductances, G and GQ, with system size L and temperature T. This is done both for the case of strong interaction between the 1 and 1/ 3 modes (when the low-temperature physics of the interacting segment of the device is controlled by the vicinity of the strong-disorder Kane-Fisher-Polchinski fixed point) and for relatively weak interaction, for which the disorder is irrelevant at T=0 in the renormalization-group sense. The transport properties in both cases are similar in several respects. In particular, G(L) is close to 4/3 (in units of e2âh) and GQ to 2 (in units of ÏTâ6ħ) for small L, independently of the interaction strength. For large L the system is in an incoherent regime, with G given by 2/3 and GQ showing the Ohmic scaling, GQâ1âL, again for any interaction strength. The hallmark of the strong-disorder fixed point is the emergence of an intermediate range of L, in which the electric conductance shows strong mesoscopic fluctuations and the thermal conductance is GQ=1. The analysis is extended also to a device with floating 1/3 mode, as studied in a recent experiment (Grivnin et al. 2014).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Annals of Physics - Volume 385, October 2017, Pages 287-327
Journal: Annals of Physics - Volume 385, October 2017, Pages 287-327
نویسندگان
I.V. Protopopov, Yuval Gefen, A.D. Mirlin,