کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5496029 | 1529836 | 2016 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Strain induced novel quantum magnetotransport properties of topological insulators
ترجمه فارسی عنوان
کرنش باعث ایجاد خواص مغناطیسی کوانتومی جدیدی از مقره های توپولوژیکی می شود
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کلمات کلیدی
نژاد، نوسان ویس، هدایت،
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
چکیده انگلیسی
Recent theoretical and experimental researches have revealed that the strained bulk HgTe can be regarded as a three-dimensional topological insulator (TI). Motivated by this, we explore the strain effects on the transport properties of the HgTe surface states, which are modulated by a weak 1D in-plane electrostatic periodic potential in the presence of a perpendicular magnetic field. We analytically derive the zero frequency (dc) diffusion conductivity for the case of quasielastic scattering in the Kubo formalism, and find that, in strong magnetic field regime, the Shubnikov-de Haas oscillations are superimposed on top of the Weiss oscillations due to the electric modulation for null and finite strain. Furthermore, the strain is shown to remove the degeneracy in inversion symmetric Dirac cones on the top and bottom surfaces. This accordingly gives rise to the splitting and mixture of Landau levels, and the asymmetric spectrum of the dc conductivity. These phenomena, not known in a conventional 2D electron gas and even in a strainless TI and graphene, are a consequence of the anomalous spectrum of surface states in a fully stained TI. These results should be valuable for electronic and spintronic applications of TIs, and thus we fully expect to see them in the further experiment.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Annals of Physics - Volume 375, December 2016, Pages 251-264
Journal: Annals of Physics - Volume 375, December 2016, Pages 251-264
نویسندگان
Ning Ma, Shengli Zhang, Daqing Liu,