کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5496387 | 1399846 | 2017 | 30 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effective properties of undoped and Indium3+-doped tin manganese telluride (Sn1 â xMnxTe) nanoparticles via using a chemical bath deposition route
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Tin manganese telluride nanoparticles (Sn1âxMnxTe NPs) were first synthesized on a niobium pentoxide (Nb2O5) film using a chemical bath deposition (CBD) route. An individual particle size before and after indium (In3+) doping of â¼70-150 nm was investigated with stoichiometric formation of the SnMnTe phase. Furthermore, a cubic or rocksalt structure of the Sn0.938Mn0.062Te phase was also kept incorporated in the structure. The plotted energy band gaps for undoped and In3+-doped samples were 2.17 and 1.83 eV, respectively. The reduction of photoluminescence (PL) spectra after In3+ doping, while the indium dopant acted as a trap state incorporated in Sn1âxMnxTe NPs, showed enhanced charge separation and reduced charge recombination, which resulted in a higher charge density trapped in the conduction band of Nb2O5 and was also confirmed by the result of anodic peaks in the cyclic voltammetry. These results suggest new possibilities in optoelectronic and electrochemical devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 381, Issue 21, 9 June 2017, Pages 1807-1814
Journal: Physics Letters A - Volume 381, Issue 21, 9 June 2017, Pages 1807-1814
نویسندگان
Patsorn Boon-on, Auttasit Tubtimtae, Veeramol Vailikhit, Pichanan Teesetsopon, Supab Choopun,