کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5496554 | 1399856 | 2017 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Impacts of thermal annealing temperature on memory properties of charge trapping memory with NiO nano-pillars
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
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چکیده انگلیسی
In this work, Au/SiO2/NiO/SiO2/Si structure charge trapping memory using NiO as the charge trapping layer was fabricated, and the impacts of the annealing temperature on the charge trapping memory performance were investigated in detail. The sample thermal annealed at 750°C indicated a large memory window of 2.07 V under a low sweeping voltage of ±5V, which also has excellent charge retention properties with only small charge loss of â¼4.9% after more than 104s retention. The high resolved transmission electron microscopy shows that the NiO films grew as nano-pillars structure. It is proposed that the excellent memory characteristics of the device are attributed to the inherent atomic defects and oxygen vacancies accumulated by the grain boundaries around NiO nano-pillars. Meanwhile the interface inter-diffusion formed by thermal annealing process is also an indispensable factor for the excellent memory characteristics of the device.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 381, Issue 10, 11 March 2017, Pages 913-916
Journal: Physics Letters A - Volume 381, Issue 10, 11 March 2017, Pages 913-916
نویسندگان
Xiaobing Yan, Tao Yang, Xinlei Jia, Jianhui Zhao, Zhenyu Zhou,