کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5497019 1399880 2016 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Investigating change of properties in gallium ion irradiation patterned single-layer graphene
ترجمه فارسی عنوان
بررسی تغییر خواص در گرافن تک لایه با الگوی تابش یون گالیم
کلمات کلیدی
پرتو یون گالیم، الگوسازی، ظرفیت اسکن کردن، تابع کار، خواص تغییر
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک و نجوم (عمومی)
چکیده انگلیسی
Besides its excellent physical properties, graphene promises to play a significant role in electronics with superior properties, which requires patterning of graphene for device integration. Here, we presented the changes in properties of single-layer graphene before and after patterning using gallium ion beam. Combined with Raman spectra of graphene, the scanning capacitance microscopy (SCM) image confirmed that a metal-insulator transition occurred after large doses of gallium ion irradiation. The changes in work function and Raman spectra of graphene indicated that the defect density increased as increasing the dose and a structural transition occurred during gallium ion irradiation. The patterning width of graphene presented an increasing trend due to the scattering influence of the impurities and the substrate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 380, Issue 42, 14 October 2016, Pages 3514-3519
نویسندگان
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