کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5497020 | 1399880 | 2016 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Giant magnetoresistance in a two-dimensional electron gas modulated by magnetic barriers and the δ-doping
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Giant magnetoresistance in a two-dimensional electron gas modulated by magnetic barriers and the δ-doping Giant magnetoresistance in a two-dimensional electron gas modulated by magnetic barriers and the δ-doping](/preview/png/5497020.png)
چکیده انگلیسی
We theoretically investigate the modulation of the δ-doping to a semiconductor-based giant magnetoresistance (GMR) device, which can be realized experimentally by depositing two parallel ferromagnetic (FM) stripes on top and bottom of a GaAs/AlxGa1-xAs heterostructure. It is shown that a considerable GMR effect still exists in this device with the δ-doping. It is also shown that the magnetoresistance ratio (MR) depends on not only the weight but also the position of the δ-doping. These interesting results will be useful in understanding and designing structurally-controllable GMR devices for magnetic information storage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 380, Issue 42, 14 October 2016, Pages 3520-3523
Journal: Physics Letters A - Volume 380, Issue 42, 14 October 2016, Pages 3520-3523
نویسندگان
Lan-Lan Zhang, Mao-Wang Lu, Shi-Peng Yang, Qiang Tang,