کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
610082 | 880639 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
شیمی کلوئیدی و سطحی
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![عکس صفحه اول مقاله: Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition](/preview/png/610082.png)
چکیده انگلیسی
This communication reports on the novel work of creating a transistor channel based on functionalized single-walled carbon nanotubes (SWNTs) via electrostatic atomization deposition. The current method of drop-cast though convenient was unable to produce replicable transistor device due to its inherent inability in controlling the volume of liquid being drop-cast. Hence, this method of electrostatic atomization was introduced to consistently obtain a uniformly distributed SWNT channel resulting in a good transistor device.
The agglomeration of Carbon Nanotubes was reduced via electrostatic atomization and a Schottky junction was formed easily.Figure optionsDownload as PowerPoint slide
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Colloid and Interface Science - Volume 338, Issue 1, 1 October 2009, Pages 266–269
Journal: Journal of Colloid and Interface Science - Volume 338, Issue 1, 1 October 2009, Pages 266–269
نویسندگان
D.W.H. Fam, A.I.Y. Tok,