Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition

This communication reports on the novel work of creating a transistor channel based on functionalized single-walled carbon nanotubes (SWNTs) via electrostatic atomization deposition. The current method of drop-cast though convenient was unable to produce replicable transistor device due to its inherent inability in controlling the volume of liquid being drop-cast. Hence, this method of electrostatic atomization was introduced to consistently obtain a uniformly distributed SWNT channel resulting in a good transistor device.

The agglomeration of Carbon Nanotubes was reduced via electrostatic atomization and a Schottky junction was formed easily.Figure optionsDownload as PowerPoint slide