کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
618463 | 1455028 | 2011 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analyses and experimental confirmation of removal performance of silicon oxide film in the chemical-mechanical polishing (CMP) process with pattern geometry of concentric groove pads
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
شیمی کلوئیدی و سطحی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Analyses and experimental confirmation of removal performance of silicon oxide film in the chemical-mechanical polishing (CMP) process with pattern geometry of concentric groove pads Analyses and experimental confirmation of removal performance of silicon oxide film in the chemical-mechanical polishing (CMP) process with pattern geometry of concentric groove pads](/preview/png/618463.png)
چکیده انگلیسی
ⶠThis paper had established a well model in CMP process for silicon oxide film. The geometry of the concentric grooves pad was discussed, and the numerical data of removal rate were well confirmed with experiments obtained from a commercial device. The removed thickness of silicon oxide films increased with decreasing grooving width and depth of grooves. In the presented study, the optimal concentric pad for silicon oxide polishing had a grooving width is 1 mm, a depth is 1.2 mm, and a pitch is 4 mm, for a removal rate is 3250 A/min and non-uniformity is under 5%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Wear - Volume 270, Issues 3â4, 12 January 2011, Pages 172-180
Journal: Wear - Volume 270, Issues 3â4, 12 January 2011, Pages 172-180
نویسندگان
Chin-Chung Wei, Jeng-Haur Horng, An-Chen Lee, Jen-Fin Lin,